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    Large aluminum sheets and extra-wide aluminum sheets are widly used in roof material, container body.

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    Huawei aluminum is 18 years aluminum tread plate manufacturers and suppliers. Huawei aluminum tread plate is durable and corrosion-resistant. Available in 3003 Tread-Brite as well as 5086 and 6061 alloys, our extensive inventory includes both bright and mill-finished plate, in both embossed and diamond tread forms. Our plate processing services deliver custom-sized aluminum tread plate to your specifications. With in-house processing centers in multiple markets and an extensive North American distribution network, Huawei has the inventory and processing capabilities to deliver the aluminum tread plate you need, when you need it. As a China-based aluminum tread plate manufacturer and supplier, we also provide aluminium slit coil, aluminum strip, coated aluminum coil, aluminum sheet, anodising aluminum coil, embossed aluminum sheet, etc. For more detailed information, please feel free to contact us at Huawei. We look forward to working with you.

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    Aluminum checker plate is also called aluminum chequered plate. It is made from aluminum sheet. One side of the surface is embossed with diamond plate pattern. The different pattern can fit different environments and various usage. Aluminum checker plate is better for antirust and lighter than other materials, it can be used for many years and can retain high value after being replaced. This type of checkered plate is widely used as antiskid plate in both commercial and industrial flooring needs and also used in the vehicles, such as the ambulance and the firework truck.

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    Aluminum mirror sheet refers to an aluminum plate that is processed by various methods such as rolling and grinding to make the surface of the plate exhibit a mirror effect. Generally, the rolled aluminum plate is used in the Aluminum mirror sheet in foreign countries to manufacture the coil material and sheet material. Aluminum mirror sheet is widely used. It is widely used in lighting lamp reflectors and lamp decoration, solar heat-collecting reflective materials, interior building decoration, exterior wall decoration, household appliance panels, electronic product shells, furniture kitchens, automotive interior and exterior decoration, signage, signs, luggage, jewelry boxes And other fields.

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Us5270263a Process For Depositing Aluminum Nitride Aln

  • Low-Temperature Deposition of Highly Textured .

    2020-4-5 · AlN (20008C) and the lack of precursors which form AlN at lower temperatures.4,6–10Such high growth temperatures are incompatible with a VLSI CMOS process using Al electrodes. Low-temperature deposition by reactive sputtering is the next alternative. Films deposited with this technique are usually poly-

  • Method for Depositing an Aluminum Nitride Coating onto ...

    In particular, methods are provided for coating AlN onto solid surfaces by heating and vaporizing an aluminum nitride precursor and exposing solid surfaces to the heated and vaporized aluminum nitride precursor. In an embodiment, the aluminum nitride precursor is AlCl 3 (NH 3) x, wherein x=1-6. In an embodiment, the surface is a metallic ...

  • Process for treatment of reactive fines - PLASMA ...

    1996-5-8 · A process for treatment of aluminum dross residue (NMP) having available aluminum nitride (AlN) and/or free aluminum (Al) and/or aluminum chlorides (AlCl3) having a particle size within the range of 0.3 to 300 microns, i.e., "fines" to produce a high alumina lightweight aggregate is described.

  • Formation of aluminum nitride thin films as gate ...

    2004-6-1 · Aluminum nitride (AlN) films were prepared on p-type Si (1 0 0) substrates using plasma-enhanced atomic layer deposition (PEALD) with AlCl 3 as the precursor and an NH 3 /Ar/H 2 plasma as the reactant. The compositional depth of the AlN films were analyzed by Auger electron spectroscopy (AES); hydrogen (H) and chlorine (Cl) impurities were determined from Rutherford .

  • US5270263A - Process for depositing aluminum nitride .

    A process for depositing a thin film of aluminum nitride (AlN) includes sputtering an aluminum target with energetic nitrogen ions generated in a nitrogen plasma. A single gas (i.e. nitrogen) is...

  • An electronic synapse device based on aluminum nitride ...

    2020-3-6 · The aluminum target was sputtered with the mixed gas at a power of 1 kW, and the process lasted approximately 60 s. Finally, the TiN top electrode (TE) was sputtered on the as-prepared AlN layer. The sputtering condition (titanium target instead of aluminum target) was similar with depositing AlN films.

  • Bulk single crystals of aluminum nitride - Cree, Inc.

    Process for depositing aluminum nitride (AlN) using nitrogen plasma sputtering: 1993-12-14: Kim et al. 438/702: 5190738: Process for producing unagglomerated single crystals of aluminum nitride: 1993-03-02: Parent: 423/412: 5096860: Process for producing unagglomerated single crystals of aluminum nitride: 1992-03-17: Nadkarni: 501/96: 5034604

  • Pentacene Patterning on Aluminum Nitride by Water .

    The aluminum nitride AlN surface was patterned using a conventional photolithography process and then treated with oxygen O 2 plasma on uncovered AlN to modify surface polarity. Following pentacene deposition, the sample was dipped in water to remove pentacene from the O 2 plasma-treated area. The O

  • Deposition of AlN at lower temperatures by atmospheric ...

    1998-6-4 · We have studied an atomic layer growth process using amine–alane adducts as precursors for depositing aluminum nitride (AlN) thin films at temperatures between 300 and 800 K. The atomic layer deposition process was carried out in a horizontal metalorganic .

  • High Quality AlN Thin Films Deposited by Middle .

    A study of depositing high quality c-axis oriented polycrystalline aluminum nitride thin film at room temperature was presented. Aluminum nitride films were grown by mid-frequency (MF) reactive sputtering. Metallic aluminum target was used to deposit AlN films in Ar/N2 gas mixture. A 50nm thick of N-rich AlN buffer layer was deposited at the initial stage of sputtering process to improve the ...

  • (PDF) Atomic Layer Deposition of Aluminum Nitride Thin ...

    Aluminum nitride (AlN) thin films were deposited from trimethyl aluminum (TMA) and Ammonia (NH3) by thermal atomic layer deposition (thermal ALD) and plasma enhanced atomic layer deposition (PEALD ...

  • Low Loss, Wideband 5.2GHz BAW RF Filters Using Single ...

    2021-4-1 · Bulk Acoustic Wave, RF Filters, 5G, WiFi, AlN, Resonators In this work, the authors report single crystal aluminum nitride (AlN) bulk acoustic wave (BAW) resonator and filter technology in the 1-6GHz range for cellular, WiFi and high frequency and high power applications. 5.2GHz BAW filters, utilizing undoped single crystal AlN, are reported.

  • Pentacene Patterning on Aluminum Nitride by Water .

    The aluminum nitride AlN surface was patterned using a conventional photolithography process and then treated with oxygen O 2 plasma on uncovered AlN to modify surface polarity. Following pentacene deposition, the sample was dipped in water to remove pentacene from the O 2 plasma-treated area. The O

  • Bulk single crystals of aluminum nitride - Cree, Inc.

    Process for depositing aluminum nitride (AlN) using nitrogen plasma sputtering: 1993-12-14: Kim et al. 438/702: 5190738: Process for producing unagglomerated single crystals of aluminum nitride: 1993-03-02: Parent: 423/412: 5096860: Process for producing unagglomerated single crystals of aluminum nitride: 1992-03-17: Nadkarni: 501/96: 5034604

  • Growth of bulk single crystals of aluminum nitride from a ...

    1997-10-6 · Process for depositing aluminum nitride (AlN) using nitrogen plasma sputtering: 1993-12-14: Kim et al. 438/702: 4897149: Method of fabricating single-crystal substrates of silicon carbide: 1990-01-30: Suzuki et al. 428/698: 4597949: Apparatus for growing crystals: 1986-07-01: Jasinski et al. 117/217: 4489128: Structure containing epitaxial ...

  • Process for depositing aluminum nitride (AlN) using ...

    1991-12-20 · A process for depositing a thin film of aluminum nitride (AlN) includes sputtering an aluminum target with energetic nitrogen ions generated in a nitrogen plasma. A single gas (i.e. nitrogen) is used as both the reactive gas and as the sputtering gas.

  • (PDF) Aluminum Nitride to Silicon Direct Bonding for an ...

    2021-8-4 · The results showed a multilayered bonding interface of Si(Device)/SiO 2 / ALON/AlN/Si(Handle) with fluorine in the aluminum oxynitride layer from the proceeding AlN surface activation process.

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